SGH23N60UFD Datasheet. Specs and Replacement

Type Designator: SGH23N60UFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 23 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Package: TO3P

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SGH23N60UFD datasheet

 ..1. Size:627K  fairchild semi
 sgh23n60ufd.pdf pdf_icon

SGH23N60UFD

September 2000 IGBT SGH23N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 12A UFD series is designed for the applications such as motor High Input Impedance control and general inverters where ... See More ⇒

 4.1. Size:229K  samsung
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SGH23N60UFD

N-CHANNEL IGBT SGH23N60UF FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=12A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage ... See More ⇒

Specs: SGH10N60RUFD, SGH13N60UFD, SGH15N120RUF, SGH15N120RUFD, SGH15N60RUFD, SGH20N120RUF, SGH20N120RUFD, SGH20N60RUFD, CRG60T60AN3H, SGH25N120RUF, SGH30N60RUF, SGH30N60RUFD, SGH40N60UF, SGH40N60UFD, SGH5N120RUF, SGH5N120RUFD, SGH80N60UF

Keywords - SGH23N60UFD transistor spec

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