SGH23N60UFD IGBT. Datasheet pdf. Equivalent
Type Designator: SGH23N60UFD
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 23 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO3P
SGH23N60UFD Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGH23N60UFD Datasheet (PDF)
sgh23n60ufd.pdf
September 2000 IGBTSGH23N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12AUFD series is designed for the applications such as motor High Input Impedancecontrol and general inverters where
sgh23n60uf.pdf
N-CHANNEL IGBT SGH23N60UFFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage
Datasheet: SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , FGH40N60SFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF .
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