SGH5N120RUF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGH5N120RUF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 74 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 8 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 45 pF

Encapsulados: TO3P

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SGH5N120RUF datasheet

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 sgh5n120ruf.pdf pdf_icon

SGH5N120RUF

IGBT SGH5N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) provides low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.3 V @ IC = 5A designed for

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 sgh5n120rufd.pdf pdf_icon

SGH5N120RUF

September 2000 IGBT SGH5N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V @

Otros transistores... SGH20N120RUFD, SGH20N60RUFD, SGH23N60UFD, SGH25N120RUF, SGH30N60RUF, SGH30N60RUFD, SGH40N60UF, SGH40N60UFD, GT50JR22, SGH5N120RUFD, SGH80N60UF, SGH80N60UFD, SGI25N40, SGL10N60RUFD, SGL15N60RUFD, SGL160N60UFD, SGL20N60RUFD