SGH80N60UFD Todos los transistores

September 2000 IGBT SGH80N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 40A UFD seriesis designed for the applications such as motor High Input Impedance control and general inverters where H

N-CHANNEL IGBT SGH80N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=40A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 50nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri

IGBT SGH80N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 40A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed sw

N-CHANNEL IGBT SGH80N60UF FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (@ Ic=40A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage V