All IGBT. SGH80N60UFD Datasheet

 

SGH80N60UFD IGBT. Datasheet pdf. Equivalent


   Type Designator: SGH80N60UFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 195
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 50
   Collector Capacity (Cc), typ, pF: 350
   Total Gate Charge (Qg), typ, nC: 175
   Package: TO3P

 SGH80N60UFD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGH80N60UFD Datasheet (PDF)

 ..1. Size:649K  fairchild semi
 sgh80n60ufd.pdf

SGH80N60UFD SGH80N60UFD

September 2000 IGBTSGH80N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40AUFD seriesis designed for the applications such as motor High Input Impedancecontrol and general inverters where H

 ..2. Size:264K  samsung
 sgh80n60ufd.pdf

SGH80N60UFD SGH80N60UFD

N-CHANNEL IGBT SGH80N60UFDFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 50nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri

 4.1. Size:603K  fairchild semi
 sgh80n60uf.pdf

SGH80N60UFD SGH80N60UFD

IGBTSGH80N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed sw

 4.2. Size:225K  samsung
 sgh80n60uf.pdf

SGH80N60UFD SGH80N60UFD

N-CHANNEL IGBT SGH80N60UFFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageV

Datasheet: SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , IKW75N60T , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 .

 

 
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