SGL160N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SGL160N60UFD Datasheet (PDF)

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September 2000 IGBTSGL160N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 80AUFD series is designed for the applications such as motor High Input Impedancecontrol and general inverters where

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IGBTSGL160N60UFDUltrafast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high speed

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IGBTSGL160N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed s

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