SGL160N60UFD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGL160N60UFD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 101 nS

Coesⓘ - Capacitancia de salida, typ: 600 pF

Encapsulados: TO264

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SGL160N60UFD datasheet

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SGL160N60UFD

September 2000 IGBT SGL160N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 80A UFD series is designed for the applications such as motor High Input Impedance control and general inverters where

 ..2. Size:662K  onsemi
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SGL160N60UFD

IGBT SGL160N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 80A The UFD series is designed for applications such as motor High input impedance control and general inverters where high speed

 3.1. Size:573K  fairchild semi
sgl160n60uf.pdf pdf_icon

SGL160N60UFD

IGBT SGL160N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 80A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed s

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