SGL160N60UFD Datasheet. Specs and Replacement
Type Designator: SGL160N60UFD 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 101 nS
Coesⓘ - Output Capacitance, typ: 600 pF
Package: TO264
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SGL160N60UFD datasheet
sgl160n60ufd.pdf
September 2000 IGBT SGL160N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 80A UFD series is designed for the applications such as motor High Input Impedance control and general inverters where... See More ⇒
sgl160n60ufd.pdf
IGBT SGL160N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 80A The UFD series is designed for applications such as motor High input impedance control and general inverters where high speed... See More ⇒
sgl160n60uf.pdf
IGBT SGL160N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 80A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed s... See More ⇒
Specs: SGH40N60UFD, SGH5N120RUF, SGH5N120RUFD, SGH80N60UF, SGH80N60UFD, SGI25N40, SGL10N60RUFD, SGL15N60RUFD, BT40T60ANF, SGL20N60RUFD, SGL25N120RUFD, SGL30N60RUFD, SGL40N150, SGL40N150D, SGL50N60RUFD, SGL5N60RUFD, SGL60N90D
Keywords - SGL160N60UFD transistor spec
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