SGL60N90D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGL60N90D
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 900 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 250 nS
Coesⓘ - Capacitancia de salida, typ: 800 pF
Paquete / Cubierta: TO264
Búsqueda de reemplazo de SGL60N90D - IGBT
SGL60N90D Datasheet (PDF)
sgl60n90d.pdf
IGBT CO-PAK SGL60N90DFEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.7 V (at Ic=60A)1* High Input ImpedanceAPPLICATIONSC* Home Appliance - Induction HeaterG - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V900VGEGate - Emitter Voltage V 25ICCon
sgl60n90dg3.pdf
September 2000 IGBTSGL60N90DG3General Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with trench gate High Speed Switchingstructure have superior performance in conduction and Low Saturation Voltage : VCE(sat) = 2.0 V @ IC = 60Aswitching to planar gate structure, and also have wide noise High Input Impedanceimmunity. These devices are well suitable for
sgl60n90dg3.pdf
N-CHANNEL IGBTSGL60N90DG3FEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (at Ic=60A)1* High Input Impedance* Built in Fast Recovery DiodeCAPPLICATIONS* Home ApplianceG - Induction Heater - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V900VGEGa
Otros transistores... SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , FGH60N60SFD , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2