SGL60N90D - параметры транзистора, его аналоги, Даташиты

SGL60N90D Datasheet (PDF)

..1. Size:233K samsung
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IGBT CO-PAK SGL60N90DFEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.7 V (at Ic=60A)1* High Input ImpedanceAPPLICATIONSC* Home Appliance - Induction HeaterG - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V900VGEGate - Emitter Voltage V 25ICCon

0.1. Size:385K fairchild semi
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September 2000 IGBTSGL60N90DG3General Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with trench gate High Speed Switchingstructure have superior performance in conduction and Low Saturation Voltage : VCE(sat) = 2.0 V @ IC = 60Aswitching to planar gate structure, and also have wide noise High Input Impedanceimmunity. These devices are well suitable for

0.2. Size:331K samsung
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N-CHANNEL IGBTSGL60N90DG3FEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (at Ic=60A)1* High Input Impedance* Built in Fast Recovery DiodeCAPPLICATIONS* Home ApplianceG - Induction Heater - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V900VGEGa

Другие IGBT... SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , IKW75N60T , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF .