SGL60N90DG3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGL60N90DG3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 180 W
|Vce|ⓘ - Tensión máxima colector-emisor: 900 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 450 nS
Coesⓘ - Capacitancia de salida, typ: 250 pF
Paquete / Cubierta: TO264
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SGL60N90DG3 Datasheet (PDF)
sgl60n90dg3.pdf
September 2000 IGBTSGL60N90DG3General Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with trench gate High Speed Switchingstructure have superior performance in conduction and Low Saturation Voltage : VCE(sat) = 2.0 V @ IC = 60Aswitching to planar gate structure, and also have wide noise High Input Impedanceimmunity. These devices are well suitable for
sgl60n90dg3.pdf
N-CHANNEL IGBTSGL60N90DG3FEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (at Ic=60A)1* High Input Impedance* Built in Fast Recovery DiodeCAPPLICATIONS* Home ApplianceG - Induction Heater - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V900VGEGa
sgl60n90d.pdf
IGBT CO-PAK SGL60N90DFEATURESTO-264* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.7 V (at Ic=60A)1* High Input ImpedanceAPPLICATIONSC* Home Appliance - Induction HeaterG - IH JAR - Micro Wave Oven EABSOLUTE MAXIMUM RATINGS Symbol Characteristics UnitRatingVCESCollector-Emitter Voltage V900VGEGate - Emitter Voltage V 25ICCon
Otros transistores... SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , GT30G124 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2