SGL60N90DG3 - аналоги, параметры транзистора - Справочник транзисторов

SGL60N90DG3 даташит

..1. Size:385K fairchild semi
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September 2000 IGBT SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors (IGBTs) with trench gate High Speed Switching structure have superior performance in conduction and Low Saturation Voltage VCE(sat) = 2.0 V @ IC = 60A switching to planar gate structure, and also have wide noise High Input Impedance immunity. These devices are well suitable for

..2. Size:331K samsung
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N-CHANNEL IGBT SGL60N90DG3 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V (at Ic=60A) 1 * High Input Impedance * Built in Fast Recovery Diode C APPLICATIONS * Home Appliance G - Induction Heater - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Ga

5.1. Size:233K samsung
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IGBT CO-PAK SGL60N90D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.7 V (at Ic=60A) 1 * High Input Impedance APPLICATIONS C * Home Appliance - Induction Heater G - IH JAR - Micro Wave Oven E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 900 VGE Gate - Emitter Voltage V 25 IC Con

Другие IGBT... SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGT60N60FD1P7 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF .