SGP10N60RUF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGP10N60RUF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 75 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 58 pF

Encapsulados: TO220

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SGP10N60RUF datasheet

 ..1. Size:231K  samsung
 sgp10n60ruf.pdf pdf_icon

SGP10N60RUF

N-CHANNEL IGBT SGP10N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VC

 0.1. Size:615K  fairchild semi
 sgp10n60rufd.pdf pdf_icon

SGP10N60RUF

IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A series is designed f

 0.2. Size:272K  samsung
 sgp10n60rufd.pdf pdf_icon

SGP10N60RUF

CO-PAK IGBT SGP10N60RUFD FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.1 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

 6.1. Size:321K  infineon
 sgp10n60a sgw10n60a rev2.pdf pdf_icon

SGP10N60RUF

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b

MOSTRAR MÁS

Otros transistores... SGL25N120RUFD, SGL30N60RUFD, SGL40N150, SGL40N150D, SGL50N60RUFD, SGL5N60RUFD, SGL60N90D, SGL60N90DG3, YGW60N65F1A1, SGP13N60UF, SGP13N60UFD, SGP15N60RUF, SGP20N60RUF, SGP23N60UF, SGP40N60UF, SGP5N60RUF, SGP5N60RUFD