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SGP13N60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGP13N60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 60 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 63 pF
   Qgⓘ - Carga total de la puerta, typ: 25 nC
   Paquete / Cubierta: TO220
 

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SGP13N60UF Datasheet (PDF)

 ..1. Size:537K  fairchild semi
 sgp13n60uf.pdf pdf_icon

SGP13N60UF

IGBTSGP13N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed s

 ..2. Size:230K  samsung
 sgp13n60uf.pdf pdf_icon

SGP13N60UF

N-CHANNEL IGBT SGP13N60UFFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage

 0.1. Size:615K  fairchild semi
 sgp13n60ufd.pdf pdf_icon

SGP13N60UF

IGBTSGP13N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spee

 0.2. Size:274K  samsung
 sgp13n60ufd.pdf pdf_icon

SGP13N60UF

N-CHANNEL IGBT SGP13N60UFDFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 37nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharac

MOSTRAR MÁS

Otros transistores... SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , FGPF4633 , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF .

 

 
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