SGP13N60UF - аналоги и описание IGBT

 

SGP13N60UF - аналоги, основные параметры, даташиты

Наименование: SGP13N60UF

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 60 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 13 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃

tr ⓘ - Время нарастания типовое: 27 nS

Coesⓘ - Выходная емкость, типовая: 63 pF

Тип корпуса: TO220

 Аналог (замена) для SGP13N60UF

- подбор ⓘ IGBT транзистора по параметрам

 

SGP13N60UF даташит

 ..1. Size:537K  fairchild semi
sgp13n60uf.pdfpdf_icon

SGP13N60UF

IGBT SGP13N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed s

 ..2. Size:230K  samsung
sgp13n60uf.pdfpdf_icon

SGP13N60UF

N-CHANNEL IGBT SGP13N60UF FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage

 0.1. Size:615K  fairchild semi
sgp13n60ufd.pdfpdf_icon

SGP13N60UF

IGBT SGP13N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spee

 0.2. Size:274K  samsung
sgp13n60ufd.pdfpdf_icon

SGP13N60UF

N-CHANNEL IGBT SGP13N60UFD FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 37nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Charac

Другие IGBT... SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , IRG7IC28U , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF .

History: NGTB45N60S2 | TGAF40N60F2D | VS-GB150LH120N | SRE50N120FSUDAT | TGAN60N65F2DR | RJP60F5DPK | YGW60N65F1A2

 

 

 

 

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