SGS10N60RUFD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGS10N60RUFD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 55 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 115 pF
Encapsulados: TO220F
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SGS10N60RUFD datasheet
sgs10n60rufd.pdf
April 2001 IGBT SGS10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A series i
sgs10n60ruf.pdf
April 2001 IGBT SGS10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A d
Otros transistores... SGP6N60UF , SGP6N60UFD , SGR15N40L , SGR20N40L , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , CRG15T120BNR3S , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD .
History: SKM150GB173D | JT075N120F2MA1E | STGBL6NC60DI | JT05N065SAD | SKM450GB12E4 | BG200B12UY3-I | STGB40H65FB
History: SKM150GB173D | JT075N120F2MA1E | STGBL6NC60DI | JT05N065SAD | SKM450GB12E4 | BG200B12UY3-I | STGB40H65FB
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