SGS10N60RUFD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SGS10N60RUFD Specs and Replacement

Type Designator: SGS10N60RUFD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 55 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 16 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 115 pF

Package: TO220F

SGS10N60RUFD Substitution

- IGBTⓘ Cross-Reference Search

SGS10N60RUFD datasheet

..1. Size:617K fairchild semi
sgs10n60rufd.pdf pdf_icon

April 2001 IGBT SGS10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A series i... See More ⇒

3.1. Size:597K 1
sgs10n60ruf.pdf pdf_icon

April 2001 IGBT SGS10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A d... See More ⇒

9.1. Size:336K st
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