IGC10R60DE Todos los transistores

 ..1. Size:96K  infineon
 igc10r60de.pdf

IGC10R60DE TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist

 5.1. Size:129K  infineon
 igc10r60d.pdf

IGC10R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param

 9.1. Size:128K  infineon
 sigc100t65r3e.pdf

SIGC100T65R3E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC100T65R

 9.2. Size:116K  infineon
 sigc10t60e.pdf

SIGC10T60E IGBT3 Chip FEATURES This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE IC Die Size Package SI

 9.3. Size:235K  infineon
 sigc109t120r3le.pdf

SIGC109T120R3LE IGBT3 Power Chip Features This chip is used for 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param

 9.4. Size:127K  infineon
 sigc109t120r3l.pdf

SIGC109T120R3LE IGBT3 Chip Features This chip is used for 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Parameters R

 9.5. Size:118K  infineon
 sigc10t65e.pdf

SIGC10T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC10T65E 650

 9.6. Size:72K  infineon
 igc109t120t6rl.pdf

IGC109T120T6RL IGBT4 Low Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA

 9.7. Size:71K  infineon
 igc109t120t6rm.pdf

IGC109T120T6RM IGBT4 Medium Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses medium power modules soft turn off positive temperature coefficient Applications easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f

 9.8. Size:65K  infineon
 sigc104t170r2c.pdf

SIGC104T170R2C IGBT Chip in NPT-technology C FEATURES This chip is used for 1700V NPT technology 280 m chip chip only short circuit prove positive temperature coefficient Applications G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4695- SIGC104T170R2C 1700V 50A 10.12 x 10.18 mm2 sawn on foil A001

 9.9. Size:127K  infineon
 sigc100t60r3.pdf

SIGC100T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

 9.10. Size:74K  infineon
 igc109t120t6rh.pdf

IGC109T120T6RH IGBT4 High Power Chip Features 1200V Trench + Field stop technology This chip is used for C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw

 9.11. Size:116K  infineon
 sigc10t60se.pdf

SIGC10T60SE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE IC Die Size Package S

 9.12. Size:231K  infineon
 igc10t65qe.pdf

IGC10T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching

 9.13. Size:78K  infineon
 igc100t65t8rm.pdf

IGC100T65T8RM IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC100T6

 9.14. Size:236K  infineon
 sigc109t120r3e.pdf

SIGC109T120R3E IGBT3 Power Chip Features This chip is used for 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3E 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Paramet

 9.15. Size:127K  infineon
 sigc100t60r3e.pdf

SIGC100T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

 9.16. Size:219K  infineon
 sigc101t170r3e.pdf

SIGC101T170R3E IGBT3 Power Chip Features This chip is used for 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Paramete

 9.17. Size:126K  infineon
 sigc101t170r3.pdf

SIGC101T170R3E IGBT3 Power Chip Features This chip is used for 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Parameters