IGC10R60DE - аналоги и описание IGBT

IGC10R60DE TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist

IGC10R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param

SIGC100T65R3E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC100T65R

SIGC10T60E IGBT3 Chip FEATURES This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE IC Die Size Package SI

SIGC109T120R3LE IGBT3 Power Chip Features This chip is used for 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param

SIGC109T120R3LE IGBT3 Chip Features This chip is used for 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Parameters R

SIGC10T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC10T65E 650

IGC109T120T6RL IGBT4 Low Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA

IGC109T120T6RM IGBT4 Medium Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses medium power modules soft turn off positive temperature coefficient Applications easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f

SIGC104T170R2C IGBT Chip in NPT-technology C FEATURES This chip is used for 1700V NPT technology 280 m chip chip only short circuit prove positive temperature coefficient Applications G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4695- SIGC104T170R2C 1700V 50A 10.12 x 10.18 mm2 sawn on foil A001

SIGC100T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

IGC109T120T6RH IGBT4 High Power Chip Features 1200V Trench + Field stop technology This chip is used for C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw

SIGC10T60SE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE IC Die Size Package S

IGC10T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching

IGC100T65T8RM IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC100T6

SIGC109T120R3E IGBT3 Power Chip Features This chip is used for 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3E 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Paramet

SIGC100T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

SIGC101T170R3E IGBT3 Power Chip Features This chip is used for 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Paramete

SIGC101T170R3E IGBT3 Power Chip Features This chip is used for 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Parameters