SGS6N60UF Todos los transistores

 

SGS6N60UF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGS6N60UF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 22 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 22 pF

Encapsulados: TO220F

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SGS6N60UF datasheet

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SGS6N60UF

April 2001 IGBT SGS6N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 3A The UF series is designed for applications such as motor High input impedance control and general inverters where hig

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SGS6N60UF

April 2001 IGBT SGS6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 3A The UFD series is designed for applications such as motor High input impedance control and general inverters where

Otros transistores... SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , IKW50N60H3 , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF .

History: SGS23N60UFD

 

 

 

 

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