SGS6N60UF Todos los transistores

 

SGS6N60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGS6N60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 22 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 22 pF
   Paquete / Cubierta: TO220F
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SGS6N60UF Datasheet (PDF)

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SGS6N60UF

April 2001 IGBTSGS6N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where hig

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SGS6N60UF

April 2001 IGBTSGS6N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where

Otros transistores... SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , TGAN20N135FD , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF .

History: NCE50ED120VTP | MSG15T120FPE | SKM150GB124D | IRG4BC30F | IXSN35N120AU1 | MIXD50W650TED | IXBF20N300

 

 
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