SGS6N60UFD Todos los transistores

 

SGS6N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGS6N60UFD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 22 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 22 pF
   Paquete / Cubierta: TO220F
 

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SGS6N60UFD Datasheet (PDF)

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SGS6N60UFD

April 2001 IGBTSGS6N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where

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SGS6N60UFD

April 2001 IGBTSGS6N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where hig

Otros transistores... SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , JT075N065WED , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD .

History: IXGN50N120C3H1 | MMG50J120UZ

 

 
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