SGS6N60UFD Datasheet and Replacement
Type Designator: SGS6N60UFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 22 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 22 pF
Qg ⓘ - Total Gate Charge, typ: 15 nC
Package: TO220F
SGS6N60UFD substitution
SGS6N60UFD Datasheet (PDF)
sgs6n60ufd.pdf

April 2001 IGBTSGS6N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where
sgs6n60uf.pdf

April 2001 IGBTSGS6N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where hig
Datasheet: SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , JT075N065WED , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD .
History: DL2G50SH12A | APT30GT60BRDLG | 2SH29 | SPM1002
Keywords - SGS6N60UFD transistor datasheet
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SGS6N60UFD equivalent finder
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SGS6N60UFD replacement
History: DL2G50SH12A | APT30GT60BRDLG | 2SH29 | SPM1002



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