IGC10T65QE Todos los transistores

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IGC10T65QE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGC10T65QE

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 2.32

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: CHIP

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IGC10T65QE Datasheet (PDF)

1.1. igc10t65qe.pdf Size:231K _igbt_a

IGC10T65QE
IGC10T65QE

IGC10T65QE High Speed IGBT3 Chip Features: Recommended for:  650V Trench & Field Stop technology  discrete components and modules  high speed switching series third C generation  low VCE(sat) Applications:  low EMI  uninterruptible power supplies  low turn-off losses  welding converters G  positive temperature coefficient  converters with high switching

2.1. sigc10t65e.pdf Size:118K _igbt

IGC10T65QE
IGC10T65QE

 SIGC10T65E IGBT3 Chip Features: Recommended for: • 650V Trench & Field Stop technology • power modules • low VCE(sat) C • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient • easy paralleling G E • Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC10T65E 650

3.1. sigc10t60e.pdf Size:116K _igbt

IGC10T65QE
IGC10T65QE

 SIGC10T60E IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology • power module C • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE IC Die Size Package SI

3.2. sigc10t60se.pdf Size:116K _igbt

IGC10T65QE
IGC10T65QE

 SIGC10T60SE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology • power module C • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE IC Die Size Package S

Otros transistores... IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IXGR48N60C3D1 , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR .

 


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Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras