IGC10T65QE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGC10T65QE Datasheet (PDF)

..1. Size:231K infineon
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IGC10T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

6.1. Size:118K infineon
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SIGC10T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC10T65E 650

7.1. Size:116K infineon
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SIGC10T60E IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drivesG easy paralleling white goods E resonant applicationsChip Type VCE IC Die Size PackageSI

7.2. Size:116K infineon
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SIGC10T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drivesG easy paralleling white goods E resonant applicationsChip Type VCE IC Die Size PackageS

Otros transistores... IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IRGP4063 , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR .