IGC10T65QE Todos los transistores

 ..1. Size:231K  infineon
 igc10t65qe.pdf

IGC10T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching

 6.1. Size:118K  infineon
 sigc10t65e.pdf

SIGC10T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC10T65E 650

 7.1. Size:116K  infineon
 sigc10t60e.pdf

SIGC10T60E IGBT3 Chip FEATURES This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE IC Die Size Package SI

 7.2. Size:116K  infineon
 sigc10t60se.pdf

SIGC10T60SE IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE IC Die Size Package S