Справочник IGBT. IGC10T65QE

 

IGC10T65QE - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IGC10T65QE

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.32

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 20

Максимальная температура перехода (Tj): 175

Корпус: CHIP

Аналог (замена) для IGC10T65QE

 

 

IGC10T65QE Datasheet (PDF)

1.1. igc10t65qe.pdf Size:231K _igbt_a

IGC10T65QE
IGC10T65QE

IGC10T65QE High Speed IGBT3 Chip Features: Recommended for:  650V Trench & Field Stop technology  discrete components and modules  high speed switching series third C generation  low VCE(sat) Applications:  low EMI  uninterruptible power supplies  low turn-off losses  welding converters G  positive temperature coefficient  converters with high switching

2.1. sigc10t65e.pdf Size:118K _igbt

IGC10T65QE
IGC10T65QE

 SIGC10T65E IGBT3 Chip Features: Recommended for: • 650V Trench & Field Stop technology • power modules • low VCE(sat) C • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient • easy paralleling G E • Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC10T65E 650

 3.1. sigc10t60e.pdf Size:116K _igbt

IGC10T65QE
IGC10T65QE

 SIGC10T60E IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology • power module C • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE IC Die Size Package SI

3.2. sigc10t60se.pdf Size:116K _igbt

IGC10T65QE
IGC10T65QE

 SIGC10T60SE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology • power module C • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE IC Die Size Package S

Другие IGBT... IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IXGR48N60C3D1 , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR .

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Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 


 

 

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