IGC10T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

SIGC10T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC10T65E 650

SIGC10T60E IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drivesG easy paralleling white goods E resonant applicationsChip Type VCE IC Die Size PackageSI

SIGC10T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drivesG easy paralleling white goods E resonant applicationsChip Type VCE IC Die Size PackageS