IGC114T170S8RH Todos los transistores

 

IGC114T170S8RH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGC114T170S8RH
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Paquete / Cubierta: CHIP
 

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IGC114T170S8RH Datasheet (PDF)

 ..1. Size:126K  infineon
igc114t170s8rh.pdf pdf_icon

IGC114T170S8RH

IGC114T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageIGC114T170S8RH 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mech

 1.1. Size:247K  infineon
igc114t170s8rm.pdf pdf_icon

IGC114T170S8RH

IGC114T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mechanical Parameters

 9.1. Size:75K  infineon
sigc11t60snc.pdf pdf_icon

IGC114T170S8RH

SIGC11T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4155-SIGC11T60SNC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2

 9.2. Size:72K  infineon
igc11t120t6l.pdf pdf_icon

IGC114T170S8RH

IGC11T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC11T120T6L 1200V 8A 3.48 x 3.19 mm2 sawn on foil MECHANICAL P

Otros transistores... IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE , BT60T60ANFK , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR , IGC168T170S8RH .

History: STGP10H60DF | IXSN80N60AU1 | AOTS40B65H1 | IXBT42N170A | IGP30N60H3 | MMG40W120XB6TN | MMGT50W120XB6C

 

 
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