Справочник IGBT. IGC114T170S8RH

 

IGC114T170S8RH Даташит. Аналоги. Параметры и характеристики.


   Наименование: IGC114T170S8RH
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1700 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Тип корпуса: CHIP
     - подбор IGBT транзистора по параметрам

 

IGC114T170S8RH Datasheet (PDF)

 ..1. Size:126K  infineon
igc114t170s8rh.pdfpdf_icon

IGC114T170S8RH

IGC114T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageIGC114T170S8RH 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mech

 1.1. Size:247K  infineon
igc114t170s8rm.pdfpdf_icon

IGC114T170S8RH

IGC114T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mechanical Parameters

 9.1. Size:75K  infineon
sigc11t60snc.pdfpdf_icon

IGC114T170S8RH

SIGC11T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4155-SIGC11T60SNC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2

 9.2. Size:72K  infineon
igc11t120t6l.pdfpdf_icon

IGC114T170S8RH

IGC11T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC11T120T6L 1200V 8A 3.48 x 3.19 mm2 sawn on foil MECHANICAL P

Другие IGBT... IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE , IKW40N65WR5 , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR , IGC168T170S8RH .

History: IGP10N60T | DIM1600ECM17-A | IGP50N60T

 

 
Back to Top

 


 
.