75321P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 75321P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 709 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Encapsulados: TP220AB
Búsqueda de reemplazo de 75321P MOSFET
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75321P datasheet
huf75321p3 huf75321s3s.pdf
HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the
hufa75321p3 hufa75321s3s hufa75321s3st.pdf
HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves t
huf75321p3.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... 40822 , 40823 , 40841 , 75307D3 , 75307P3 , 75309D , 75309P3 , 75321D3 , IRF3205 , 75321S , 75329G , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G .
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