75321P Datasheet and Replacement
Type Designator: 75321P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 709 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TP220AB
- MOSFET Cross-Reference Search
75321P Datasheet (PDF)
huf75321p3 huf75321s3s.pdf

HUF75321P3, HUF75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves the
hufa75321p3 hufa75321s3s hufa75321s3st.pdf

HUFA75321P3, HUFA75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves t
huf75321p3.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 40822 , 40823 , 40841 , 75307D3 , 75307P3 , 75309D , 75309P3 , 75321D3 , IRF3205 , 75321S , 75329G , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G .
History: SMY52 | SP07N65 | 6N65KL-TN3-R | SMP730
Keywords - 75321P MOSFET datasheet
75321P cross reference
75321P equivalent finder
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History: SMY52 | SP07N65 | 6N65KL-TN3-R | SMP730



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