All MOSFET. 75321P Datasheet

 

75321P MOSFET. Datasheet pdf. Equivalent

Type Designator: 75321P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 709 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: TP220AB

75321P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

75321P Datasheet (PDF)

0.1. hufa75321p3 hufa75321s3s hufa75321s3st.pdf Size:232K _fairchild_semi

75321P
75321P

HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs • 35A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves t

0.2. huf75321p3 huf75321s3s.pdf Size:235K _fairchild_semi

75321P
75321P

HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs • 35A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the

 9.1. hufa75321d3 hufa75321d3st.pdf Size:224K _fairchild_semi

75321P
75321P

HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs • 20A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves

9.2. hufa75321d3 hufa75321d3s.pdf Size:226K _fairchild_semi

75321P
75321P

HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs • 20A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves

Datasheet: 40822 , 40823 , 40841 , 75307D3 , 75307P3 , 75309D , 75309P3 , 75321D3 , IRFZ44N , 75321S , 75329G , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G .

 

 
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