BUK95180-100A Todos los transistores

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BUK95180-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK95180-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 54 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 11 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.173 Ohm

Empaquetado / Estuche: TO220AB

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BUK95180-100A Datasheet (PDF)

1.1. buk95180-100a_buk96180-100a.pdf Size:68K _philips

BUK95180-100A
BUK95180-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench technology w

3.1. buk9518-55.pdf Size:52K _philips

BUK95180-100A
BUK95180-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9518-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 57 A low on-state resistance and

3.2. buk9518-30_1.pdf Size:47K _philips

BUK95180-100A
BUK95180-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9518-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 55 A low on-state resistance and

3.3. buk9518-55a_buk9618-55a.pdf Size:333K _philips

BUK95180-100A
BUK95180-100A

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q101 complia

Otros transistores... BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A , BUK95150-55A , BUK9515-100A , BUK9516-55A , BUK9516-75B , IRFP450 , BUK9518-55A , BUK9520-100A , BUK9520-100B , BUK9520-55A , BUK9523-75A , BUK9524-55A , BUK9529-100B , BUK952R8-30B .

 


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