BUK95180-100A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK95180-100A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.173 Ohm

Encapsulados: TO220AB

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BUK95180-100A datasheet

 ..1. Size:68K  philips
 buk95180-100a buk96180-100a.pdf pdf_icon

BUK95180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench tec

 7.1. Size:333K  philips
 buk9518-55a buk9618-55a.pdf pdf_icon

BUK95180-100A

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q

 7.2. Size:47K  philips
 buk9518-30 1.pdf pdf_icon

BUK95180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 55 A low on-state resist

 7.3. Size:52K  philips
 buk9518-55.pdf pdf_icon

BUK95180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 57 A low on-state resist

MOSTRAR MÁS

Otros transistores... BUK9510-55A, BUK9511-55A, BUK9512-55B, BUK9514-55A, BUK95150-55A, BUK9515-100A, BUK9516-55A, BUK9516-75B, IRFB4115, BUK9518-55A, BUK9520-100A, BUK9520-100B, BUK9520-55A, BUK9523-75A, BUK9524-55A, BUK9529-100B, BUK952R8-30B