BUK95180-100A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK95180-100A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.173 Ohm
Тип корпуса: TO220AB
Аналог (замена) для BUK95180-100A
BUK95180-100A Datasheet (PDF)
buk95180-100a buk96180-100a.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 11 Atrench tec
buk9518-55a buk9618-55a.pdf

BUK9518-55A; BUK9618-55ATrenchMOS logic level FETRev. 01 27 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9518-55A in SOT78 (TO-220AB)2BUK9618-55A in SOT404 (D -PAK).2. Features TrenchMOS technology Q
buk9518-30 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 55 Alow on-state resist
buk9518-55.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 57 Alow on-state resist
Другие MOSFET... BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A , BUK95150-55A , BUK9515-100A , BUK9516-55A , BUK9516-75B , IRFP250N , BUK9518-55A , BUK9520-100A , BUK9520-100B , BUK9520-55A , BUK9523-75A , BUK9524-55A , BUK9529-100B , BUK952R8-30B .
History: STW21N65M5 | SVG15670ND | AP75N07GS | UF840KG-TF3-R | SVFP14N60CFJD | BSP100 | GP2M005A060XXX
History: STW21N65M5 | SVG15670ND | AP75N07GS | UF840KG-TF3-R | SVFP14N60CFJD | BSP100 | GP2M005A060XXX



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