BUK954R4-40B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK954R4-40B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 254 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO220AB

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BUK954R4-40B datasheet

 ..1. Size:318K  philips
 buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf pdf_icon

BUK954R4-40B

BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Application

 5.1. Size:215K  nxp
 buk954r4-80e.pdf pdf_icon

BUK954R4-40B

BUK954R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive

 7.1. Size:213K  nxp
 buk954r8-60e.pdf pdf_icon

BUK954R4-40B

BUK954R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive

 8.1. Size:81K  philips
 buk9540 buk9640-100a 2.pdf pdf_icon

BUK954R4-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 37 A trench techn

MOSTRAR MÁS

Otros transistores... BUK9523-75A, BUK9524-55A, BUK9529-100B, BUK952R8-30B, BUK9535-100A, BUK9535-55A, BUK953R2-40B, BUK954R2-55B, IRF4905, BUK9575-100A, BUK9575-55A, BUK9604-40A, BUK9605-30A, BUK9606-40B, BUK9606-55A, BUK9606-55B, BUK9606-75B