All MOSFET. BUK954R4-40B Datasheet

 

BUK954R4-40B Datasheet and Replacement


   Type Designator: BUK954R4-40B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 254 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220AB
 

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BUK954R4-40B Datasheet (PDF)

 ..1. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf pdf_icon

BUK954R4-40B

BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application

 5.1. Size:215K  nxp
buk954r4-80e.pdf pdf_icon

BUK954R4-40B

BUK954R4-80EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 7.1. Size:213K  nxp
buk954r8-60e.pdf pdf_icon

BUK954R4-40B

BUK954R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.1. Size:81K  philips
buk9540 buk9640-100a 2.pdf pdf_icon

BUK954R4-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 37 Atrench techn

Datasheet: BUK9523-75A , BUK9524-55A , BUK9529-100B , BUK952R8-30B , BUK9535-100A , BUK9535-55A , BUK953R2-40B , BUK954R2-55B , IRF4905 , BUK9575-100A , BUK9575-55A , BUK9604-40A , BUK9605-30A , BUK9606-40B , BUK9606-55A , BUK9606-55B , BUK9606-75B .

History: SPU07N60C3 | F5020-S | NVF3055-100

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