BUK9608-55B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9608-55B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 203 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: D2PAK

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BUK9608-55B datasheet

 ..1. Size:783K  nxp
 buk9608-55b.pdf pdf_icon

BUK9608-55B

BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 4 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features a

 4.1. Size:55K  philips
 buk9608-55 2.pdf pdf_icon

BUK9608-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9608-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC) 75 A the device feat

 4.2. Size:328K  philips
 buk9508-55a buk9508-55a buk9608-55a.pdf pdf_icon

BUK9608-55B

BUK95/9608-55A TrenchMOS logic level FET Rev. 03 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 1

 4.3. Size:78K  philips
 buk9508 buk9608-55a 2.pdf pdf_icon

BUK9608-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo

MOSTRAR MÁS

Otros transistores... BUK9604-40A, BUK9605-30A, BUK9606-40B, BUK9606-55A, BUK9606-55B, BUK9606-75B, BUK9607-30B, BUK9608-55A, 12N60, BUK9609-40B, BUK9609-55A, BUK9609-75A, BUK9610-100B, BUK9610-55A, BUK9611-55A, BUK9612-55B, BUK9614-55A