Справочник MOSFET. BUK9608-55B

 

BUK9608-55B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK9608-55B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 203 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 45 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для BUK9608-55B

 

 

BUK9608-55B Datasheet (PDF)

 ..1. Size:783K  nxp
 buk9608-55b.pdf

BUK9608-55B BUK9608-55B

BUK9608-55BN-channel TrenchMOS logic level FETRev. 04 4 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features a

 4.1. Size:55K  philips
 buk9608-55 2.pdf

BUK9608-55B BUK9608-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9608-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting Using trench technology ID Drain current (DC) 75 Athe device feat

 4.2. Size:328K  philips
 buk9508-55a buk9508-55a buk9608-55a.pdf

BUK9608-55B BUK9608-55B

BUK95/9608-55ATrenchMOS logic level FETRev. 03 6 May 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9508-55A in SOT78 (TO-220AB)BUK9608-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 compliant 1

 4.3. Size:78K  philips
 buk9508 buk9608-55a 2.pdf

BUK9608-55B BUK9608-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

 4.4. Size:851K  nxp
 buk9608-55a.pdf

BUK9608-55B BUK9608-55B

BUK9608-55AN-channel TrenchMOS logic level FETRev. 04 31 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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