BUK9609-75A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9609-75A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: D2PAK

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BUK9609-75A Datasheet (PDF)

..1. Size:751K nxp
buk9609-75a.pdf

BUK9609-75AN-channel TrenchMOS logic level FETRev. 4 30 August 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

6.1. Size:313K philips
buk9509-55a buk9509-55a buk9609-55a.pdf

BUK95/9609-55ATrenchMOS logic level FETRev. 01 21 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-55A in SOT78 (TO-220AB)BUK9609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia

6.2. Size:976K nxp
buk9609-40b.pdf

BUK9609-40BN-channel TrenchMOS logic level FETRev. 02 7 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

7.1. Size:326K philips
buk9509 buk9609 75a-02.pdf

BUK9509-75A; BUK9609-75ATrenchMOS logic level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-75A in SOT78 (TO-220AB)BUK9609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techn

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