BUK9614-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9614-55A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 149 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 73 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Resistencia entre drenaje y fuente RDS(on): 0.013 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET BUK9614-55A
BUK9614-55A Datasheet (PDF)
buk9514-55a buk9614-55a.pdf
BUK9514-55A; BUK9614-55ATrenchMOS logic level FETRev. 01 7 Feb 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9514-55A in SOT78 (TO-220AB)BUK9614-55A in SOT404 (D 2-PAK).2. Features TrenchMOS technology
buk9614-55a.pdf
BUK9614-55AN-channel TrenchMOS logic level FETRev. 02 7 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu
buk9614-55 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9614-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 68 Athe device fea
buk9614-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9614-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 69 AThedevice feat
buk9614-60e.pdf
BUK9614-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive aval
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
