BUK9614-55A Specs and Replacement

Type Designator: BUK9614-55A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 149 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 73 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: D2PAK

BUK9614-55A substitution

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BUK9614-55A datasheet

 ..1. Size:322K  philips
 buk9514-55a buk9614-55a.pdf pdf_icon

BUK9614-55A

BUK9514-55A; BUK9614-55A TrenchMOS logic level FET Rev. 01 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology ... See More ⇒

 ..2. Size:769K  nxp
 buk9614-55a.pdf pdf_icon

BUK9614-55A

BUK9614-55A N-channel TrenchMOS logic level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu... See More ⇒

 4.1. Size:56K  philips
 buk9614-55 1.pdf pdf_icon

BUK9614-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 68 A the device fea... See More ⇒

 6.1. Size:50K  philips
 buk9614-30 1.pdf pdf_icon

BUK9614-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 69 A Thedevice feat... See More ⇒

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Detailed specifications: BUK9608-55B, BUK9609-40B, BUK9609-55A, BUK9609-75A, BUK9610-100B, BUK9610-55A, BUK9611-55A, BUK9612-55B, AON7506, BUK9615-100A, BUK9616-55A, BUK9616-75B, BUK96180-100A, BUK9618-55A, BUK9620-100B, BUK9620-55A, BUK9623-75A

Keywords - BUK9614-55A MOSFET specs

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