BUK96180-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK96180-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.173 Ohm

Encapsulados: D2PAK

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BUK96180-100A datasheet

 ..1. Size:68K  philips
 buk95180-100a buk96180-100a.pdf pdf_icon

BUK96180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench tec

 ..2. Size:770K  nxp
 buk96180-100a.pdf pdf_icon

BUK96180-100A

BUK96180-100A N-channel TrenchMOS logic level FET Rev. 02 26 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 7.1. Size:55K  philips
 buk9618-55 1.pdf pdf_icon

BUK96180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9618-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 57 A the device fea

 7.2. Size:333K  philips
 buk9518-55a buk9618-55a.pdf pdf_icon

BUK96180-100A

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q

MOSTRAR MÁS

Otros transistores... BUK9610-100B, BUK9610-55A, BUK9611-55A, BUK9612-55B, BUK9614-55A, BUK9615-100A, BUK9616-55A, BUK9616-75B, AO4407, BUK9618-55A, BUK9620-100B, BUK9620-55A, BUK9623-75A, BUK9624-55A, BUK9628-100A, BUK9628-55A, BUK9629-100B