BUK96180-100A Specs and Replacement

Type Designator: BUK96180-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.173 Ohm

Package: D2PAK

BUK96180-100A substitution

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BUK96180-100A datasheet

 ..1. Size:68K  philips
 buk95180-100a buk96180-100a.pdf pdf_icon

BUK96180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench tec... See More ⇒

 ..2. Size:770K  nxp
 buk96180-100a.pdf pdf_icon

BUK96180-100A

BUK96180-100A N-channel TrenchMOS logic level FET Rev. 02 26 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu... See More ⇒

 7.1. Size:55K  philips
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BUK96180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9618-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 57 A the device fea... See More ⇒

 7.2. Size:333K  philips
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BUK96180-100A

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q... See More ⇒

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Detailed specifications: BUK9610-100B, BUK9610-55A, BUK9611-55A, BUK9612-55B, BUK9614-55A, BUK9615-100A, BUK9616-55A, BUK9616-75B, AO4407, BUK9618-55A, BUK9620-100B, BUK9620-55A, BUK9623-75A, BUK9624-55A, BUK9628-100A, BUK9628-55A, BUK9629-100B

Keywords - BUK96180-100A MOSFET specs

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