BUK9620-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9620-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 118 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 54 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: D2PAK

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BUK9620-55A datasheet

 ..1. Size:963K  nxp
 buk9620-55a.pdf pdf_icon

BUK9620-55A

BUK9620-55A N-channel TrenchMOS logic level FET Rev. 02 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 4.1. Size:55K  philips
 buk9620-55 2.pdf pdf_icon

BUK9620-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9620-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 52 A the device fea

 6.1. Size:196K  philips
 buk9620-100b.pdf pdf_icon

BUK9620-55A

BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 6.2. Size:321K  philips
 buk9520-100a buk9620-100a buk9620-100a.pdf pdf_icon

BUK9620-55A

BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t

MOSTRAR MÁS

Otros transistores... BUK9612-55B, BUK9614-55A, BUK9615-100A, BUK9616-55A, BUK9616-75B, BUK96180-100A, BUK9618-55A, BUK9620-100B, IRFP250, BUK9623-75A, BUK9624-55A, BUK9628-100A, BUK9628-55A, BUK9629-100B, BUK962R8-30B, BUK9635-100A, BUK9635-55A