All MOSFET. BUK9620-55A Datasheet

 

BUK9620-55A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9620-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: D2PAK

 BUK9620-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9620-55A Datasheet (PDF)

 ..1. Size:963K  nxp
 buk9620-55a.pdf

BUK9620-55A BUK9620-55A

BUK9620-55AN-channel TrenchMOS logic level FETRev. 02 4 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 4.1. Size:55K  philips
 buk9620-55 2.pdf

BUK9620-55A BUK9620-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9620-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 52 Athe device fea

 6.1. Size:196K  philips
 buk9620-100b.pdf

BUK9620-55A BUK9620-55A

BUK9620-100BN-channel TrenchMOS logic level FETRev. 02 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 6.2. Size:321K  philips
 buk9520-100a buk9620-100a buk9620-100a.pdf

BUK9620-55A BUK9620-55A

BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

 6.3. Size:698K  nxp
 buk9620-100b.pdf

BUK9620-55A BUK9620-55A

BUK9620-100BN-channel TrenchMOS logic level FETRev. 02 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AMA921P | MTDP9933KQ8

 

 
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