BUK9640-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9640-100A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 158 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de BUK9640-100A MOSFET
- Selecciónⓘ de transistores por parámetros
BUK9640-100A datasheet
buk9540 buk9640-100a 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 37 A trench techn
buk9640-100a.pdf
BUK9640-100A N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf
BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Application
buk964r2-55b.pdf
BUK964R2-55B N-channel TrenchMOS logic level FET Rev. 03 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features
Otros transistores... BUK9624-55A, BUK9628-100A, BUK9628-55A, BUK9629-100B, BUK962R8-30B, BUK9635-100A, BUK9635-55A, BUK963R2-40B, IRF520, BUK964R2-55B, BUK964R4-40B, BUK9660-100A, BUK9675-100A, BUK9675-55A, BUK98150-55A, BUK98180-100A, BUK9832-55A
History: FQAF11N90 | FQA16N25C | BLM16N10-P | FQA7N90 | FQA34N20L | STP110N55F6
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2n408 | 2sc2690 | d718 datasheet | mp38 transistor | 2sc2389 | b331 transistor | 2sa720 | 2sc1345
