BUK9640-100A. Аналоги и основные параметры

Наименование производителя: BUK9640-100A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 158 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 15 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 39 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK9640-100A

- подборⓘ MOSFET транзистора по параметрам

 

BUK9640-100A даташит

 ..1. Size:81K  philips
buk9540 buk9640-100a 2.pdfpdf_icon

BUK9640-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 37 A trench techn

 ..2. Size:723K  nxp
buk9640-100a.pdfpdf_icon

BUK9640-100A

BUK9640-100A N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction

 8.1. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdfpdf_icon

BUK9640-100A

BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Application

 8.2. Size:989K  nxp
buk964r2-55b.pdfpdf_icon

BUK9640-100A

BUK964R2-55B N-channel TrenchMOS logic level FET Rev. 03 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

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