BUK9675-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9675-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 62 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Resistencia entre drenaje y fuente RDS(on): 0.068 Ohm
   Paquete / Cubierta: D2PAK

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BUK9675-55A Datasheet (PDF)

..1. Size:345K philips
buk9575-55a buk9675-55a.pdf

BUK9575-55A; BUK9675-55ATrenchMOS logic level FETRev. 01 9 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9575-55A in SOT78 (TO-220AB)BUK9675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

..2. Size:767K nxp
buk9675-55a.pdf

BUK9675-55AN-channel TrenchMOS logic level FETRev. 2 8 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featur

4.1. Size:56K philips
buk9675-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9675-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 19.7 Athe device f

6.1. Size:82K philips
buk9575 buk9675-100a.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9575-100A Logic level FET BUK9675-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 23 Atrench techn

6.2. Size:710K nxp
buk9675-100a.pdf

BUK9675-100AN-channel TrenchMOS logic level FET18 August 2015 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 compl

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