BUK9675-55A Datasheet. Specs and Replacement

Type Designator: BUK9675-55A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: D2PAK

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BUK9675-55A datasheet

 ..1. Size:345K  philips
 buk9575-55a buk9675-55a.pdf pdf_icon

BUK9675-55A

BUK9575-55A; BUK9675-55A TrenchMOS logic level FET Rev. 01 9 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9575-55A in SOT78 (TO-220AB) BUK9675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS techno... See More ⇒

 ..2. Size:767K  nxp
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BUK9675-55A

BUK9675-55A N-channel TrenchMOS logic level FET Rev. 2 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur... See More ⇒

 4.1. Size:56K  philips
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BUK9675-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9675-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 19.7 A the device f... See More ⇒

 6.1. Size:82K  philips
 buk9575 buk9675-100a.pdf pdf_icon

BUK9675-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9575-100A Logic level FET BUK9675-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 23 A trench techn... See More ⇒

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Detailed specifications: BUK9635-100A, BUK9635-55A, BUK963R2-40B, BUK9640-100A, BUK964R2-55B, BUK964R4-40B, BUK9660-100A, BUK9675-100A, SKD502T, BUK98150-55A, BUK98180-100A, BUK9832-55A, BUK9875-100A, BUK9880-55A, BUK9907-40ATC, BUK9907-55ATE, BUK9C07-65BIT

Keywords - BUK9675-55A MOSFET specs

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