BUK98180-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK98180-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.173 Ohm

Encapsulados: SC73

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BUK98180-100A datasheet

 ..1. Size:711K  nxp
 buk98180-100a.pdf pdf_icon

BUK98180-100A

BUK98180-100A N-channel TrenchMOS logic level FET 16 March 2016 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction

 8.1. Size:295K  philips
 buk98150 55a-01.pdf pdf_icon

BUK98180-100A

BUK98150-55A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification M3D087 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK98150-55A in SOT223 (SC-73). 2. Features TrenchMOS technology Q101 compliant 150 C rated

 8.2. Size:54K  philips
 buk98150-55 2.pdf pdf_icon

BUK98180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK98150-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 5.5 A low on-state resistanc

 8.3. Size:744K  nxp
 buk98150-55a.pdf pdf_icon

BUK98180-100A

BUK98150-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction

MOSTRAR MÁS

Otros transistores... BUK963R2-40B, BUK9640-100A, BUK964R2-55B, BUK964R4-40B, BUK9660-100A, BUK9675-100A, BUK9675-55A, BUK98150-55A, 75N75, BUK9832-55A, BUK9875-100A, BUK9880-55A, BUK9907-40ATC, BUK9907-55ATE, BUK9C07-65BIT, BUK9C10-55BIT, BUK9C10-65BIT