BUK98180-100A. Аналоги и основные параметры

Наименование производителя: BUK98180-100A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.173 Ohm

Тип корпуса: SC73

Аналог (замена) для BUK98180-100A

- подборⓘ MOSFET транзистора по параметрам

 

BUK98180-100A даташит

 ..1. Size:711K  nxp
 buk98180-100a.pdf pdf_icon

BUK98180-100A

BUK98180-100A N-channel TrenchMOS logic level FET 16 March 2016 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction

 8.1. Size:295K  philips
 buk98150 55a-01.pdf pdf_icon

BUK98180-100A

BUK98150-55A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification M3D087 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK98150-55A in SOT223 (SC-73). 2. Features TrenchMOS technology Q101 compliant 150 C rated

 8.2. Size:54K  philips
 buk98150-55 2.pdf pdf_icon

BUK98180-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK98150-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 5.5 A low on-state resistanc

 8.3. Size:744K  nxp
 buk98150-55a.pdf pdf_icon

BUK98180-100A

BUK98150-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BUK963R2-40B, BUK9640-100A, BUK964R2-55B, BUK964R4-40B, BUK9660-100A, BUK9675-100A, BUK9675-55A, BUK98150-55A, 75N75, BUK9832-55A, BUK9875-100A, BUK9880-55A, BUK9907-40ATC, BUK9907-55ATE, BUK9C07-65BIT, BUK9C10-55BIT, BUK9C10-65BIT