BUK9E04-30B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9E04-30B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 254 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: I2PAK

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BUK9E04-30B datasheet

 6.1. Size:358K  philips
 buk9504-40a buk9604-40a buk9e04-40a.pdf pdf_icon

BUK9E04-30B

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr

 8.1. Size:199K  philips
 buk9e06-55a.pdf pdf_icon

BUK9E04-30B

BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 8.2. Size:339K  philips
 buk9e08-55b.pdf pdf_icon

BUK9E04-30B

BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 8.3. Size:115K  philips
 buk95 buk96 buk9e06-55b.pdf pdf_icon

BUK9E04-30B

BUK95/96/9E06-55B N-channel TrenchMOS logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance. 1.2 Features TrenchMOS technology Q101 compli

MOSTRAR MÁS

Otros transistores... BUK9832-55A, BUK9875-100A, BUK9880-55A, BUK9907-40ATC, BUK9907-55ATE, BUK9C07-65BIT, BUK9C10-55BIT, BUK9C10-65BIT, IRLB3034, BUK9E04-40A, BUK9E06-55A, BUK9E06-55B, BUK9E08-55B, BUK9E3R2-40B, BUK9E4R4-40B, BUK9MFF-65PSS, BUK9MGP-55PTS