Справочник MOSFET. BUK9E04-30B

 

BUK9E04-30B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK9E04-30B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 254 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 56 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: I2PAK

 Аналог (замена) для BUK9E04-30B

 

 

BUK9E04-30B Datasheet (PDF)

 6.1. Size:358K  philips
 buk9504-40a buk9604-40a buk9e04-40a.pdf

BUK9E04-30B BUK9E04-30B

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr

 8.1. Size:199K  philips
 buk9e06-55a.pdf

BUK9E04-30B BUK9E04-30B

BUK9E06-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 8.2. Size:339K  philips
 buk9e08-55b.pdf

BUK9E04-30B BUK9E04-30B

BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 8.3. Size:115K  philips
 buk95 buk96 buk9e06-55b.pdf

BUK9E04-30B BUK9E04-30B

BUK95/96/9E06-55BN-channel TrenchMOS logic level FETRev. 03 30 November 2004 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology, featuring very lowon-state resistance.1.2 Features TrenchMOS technology Q101 compli

 8.4. Size:968K  nxp
 buk9e08-55b.pdf

BUK9E04-30B BUK9E04-30B

BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

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