BUK9Y58-75B Todos los transistores

 

BUK9Y58-75B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9Y58-75B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 20.73 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.15 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
   Paquete / Cubierta: LFPAK

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BUK9Y58-75B Datasheet (PDF)

 ..1. Size:814K  nxp
buk9y58-75b.pdf

BUK9Y58-75B
BUK9Y58-75B

BUK9Y58-75BN-channel TrenchMOS logic level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 8.1. Size:89K  philips
buk9y53-100b.pdf

BUK9Y58-75B
BUK9Y58-75B

BUK9Y53-100BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible1.3

 8.2. Size:314K  nxp
buk9y59-60e.pdf

BUK9Y58-75B
BUK9Y58-75B

BUK9Y59-60EN-channel 60 V, 59 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.3. Size:638K  nxp
buk9y53-100b.pdf

BUK9Y58-75B
BUK9Y58-75B

BUK9Y53-100BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatibl

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