BUK9Y58-75B Specs and Replacement

Type Designator: BUK9Y58-75B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 20.73 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: LFPAK

BUK9Y58-75B substitution

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BUK9Y58-75B datasheet

 ..1. Size:814K  nxp
 buk9y58-75b.pdf pdf_icon

BUK9Y58-75B

BUK9Y58-75B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features... See More ⇒

 8.1. Size:89K  philips
 buk9y53-100b.pdf pdf_icon

BUK9Y58-75B

BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3... See More ⇒

 8.2. Size:314K  nxp
 buk9y59-60e.pdf pdf_icon

BUK9Y58-75B

BUK9Y59-60E N-channel 60 V, 59 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a... See More ⇒

 8.3. Size:638K  nxp
 buk9y53-100b.pdf pdf_icon

BUK9Y58-75B

BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatibl... See More ⇒

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Detailed specifications: BUK9Y19-55B, BUK9Y19-75B, BUK9Y22-30B, BUK9Y27-40B, BUK9Y30-75B, BUK9Y34-100B, BUK9Y40-55B, BUK9Y53-100B, 2N7000, NX2301P, NX3008CBKS, NX3008CBKV, NX3008NBK, NX3008NBKS, NX3008NBKT, NX3008NBKV, NX3008NBKW

Keywords - BUK9Y58-75B MOSFET specs

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