NX3008CBKS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NX3008CBKS
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.28 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 0.35 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Encapsulados: TSSOP6
Búsqueda de reemplazo de NX3008CBKS MOSFET
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NX3008CBKS datasheet
..1. Size:2329K nxp
nx3008cbks.pdf 
NX3008CBKS 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ESD
5.1. Size:2309K nxp
nx3008cbkv.pdf 
NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltag
8.1. Size:1602K nxp
nx3008nbk.pdf 
NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t
8.2. Size:1607K nxp
nx3008pbkv.pdf 
NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection
8.3. Size:1602K nxp
nx3008pbk.pdf 
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t
8.4. Size:1601K nxp
nx3008pbkw.pdf 
NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre
8.5. Size:1598K nxp
nx3008nbkw.pdf 
NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre
8.6. Size:1606K nxp
nx3008nbkv.pdf 
NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection
8.7. Size:1653K nxp
nx3008pbkmb.pdf 
NX3008PBKMB 30 V, single P-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up
8.8. Size:1620K nxp
nx3008pbks.pdf 
NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2
8.9. Size:1618K nxp
nx3008nbks.pdf 
NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2
8.10. Size:1649K nxp
nx3008nbkmb.pdf 
NX3008NBKMB 30 V, single N-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up
Otros transistores... BUK9Y22-30B, BUK9Y27-40B, BUK9Y30-75B, BUK9Y34-100B, BUK9Y40-55B, BUK9Y53-100B, BUK9Y58-75B, NX2301P, 8205A, NX3008CBKV, NX3008NBK, NX3008NBKS, NX3008NBKT, NX3008NBKV, NX3008NBKW, NX3008PBK, NX3008PBKS